Samsung Semiconductor India Research (SSIR) on Wednesday announced a new partnership with the Indian Institute of Science (IISc) to promote research and development in the field of on-chip Electrostatic Discharge (ESD) Protection.
The partnership will look to build cutting-edge ESD device solutions to protect ultra-high-speed serial interfaces in advanced Integrated Circuits (ICs) and system-on-chip (SoC) products. The related research will be carried out by Prof Mayank Shrivastava’s group at the Department of Electronic Systems Engineering (DESE), IISc. Solutions arising from this research will be deployed in Samsung’s advanced process nodes.
The research agreement was exchanged by Balajee Sowrirajan, CVP & MD at Samsung Semiconductor India Research, Bengaluru, and Prof Govindan Rangarajan, Director, Indian Institute of Science (IISc), in the presence of delegates from Samsung and IISc.
“We are glad to partner with IISc to boost semiconductor innovation and envisage developing ESD knowledge along with expertise available in IISc. Our goal is also to increase capacity building through training programs at the postgraduate level, opening up opportunities for students to pursue industry internships, and encourage entrepreneurial ventures by young researchers,” said Balajee Sowrirajan, CVP & MD, SSIR.
IISc has been collaborating extensively with semiconductor industries worldwide on advanced nanoelectronics technologies, including solutions to ESD reliability threats to advanced SoCs.
Commenting on the partnership, Prof Govindan Rangarajan, Director, IISc, said, “We are excited to collaborate with Samsung Semiconductor India Research in the crucial area of advanced nanoelectronics device research. The partnership reinforces our commitment to strengthen industry-academia engagements that can make a significant impact in the coming years.”